Single FETs, MOSFETs_FETs, MOSFETs_Transistors

Single FETs, MOSFETs

Packaging

Bag

Box

Bulk

Cut Tape (CT)

Strip

Tape & Box (TB)

Tape & Reel (TR)

Tray

Tube

Product Status

Active

Obsolete

Discontinued

Last Time Buy

Not For New Designs

Mounting Type

Chassis Mount

Surface Mount

Surface Mount, Wettable Flank

Through Hole

Technology

GaNFET (Cascode Gallium Nitride FET)

GaNFET (Gallium Nitride)

MOSFET (Metal Oxide)

SiC (Silicon Carbide Junction Transistor)

SiCFET (Cascode SiCJFET)

SiCFET (Silicon Carbide)

FET Type

N-Channel

P-Channel

FET Feature

Current Sensing

Depletion Mode

Logic Level Gate, 4V Drive

Schottky Diode (Body)

Schottky Diode (Isolated)

Temperature Sensing Diode

Grade

Automotive

Military

Mfr Part #	Quantity	Price	Package	Product Status	Package / Case	Mounting Type	Operating Temperature	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Feature	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Grade	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Qualification
NTE2397 MOSFET N-CHANNEL 400V 10A TO220 NTE Electronics, Inc. Datasheet	469 Marketplace	1 : $5.81 10 : $55.20 20 : $104.60 50 : $247.00 100 : $482.00 Bag	Bag	Active	TO-220-3	Through Hole	-55°C ~ 150°C (TJ)	MOSFET (Metal Oxide)	N-Channel	10A (Tc)	550mOhm @ 6A, 10V	-	125W (Tc)	4V @ 250µA	TO-220	-	10V	±20V	400 V	63 nC @ 10 V	1400 pF @ 25 V	-
NTE2397 MOSFET N-CHANNEL 400V 10A TO220 NTE Electronics, Inc. Datasheet	469 Marketplace	1 : $5.81 10 : $55.20 20 : $104.60 50 : $247.00 100 : $482.00 Bag	Bag	Active	TO-220-3	Through Hole	-55°C ~ 150°C (TJ)	MOSFET (Metal Oxide)	N-Channel	10A (Tc)	550mOhm @ 6A, 10V	-	125W (Tc)	4V @ 250µA	TO-220	-	10V	±20V	400 V	63 nC @ 10 V	1400 pF @ 25 V	-
NTE2932 MOSFET N-CH 200V 21.3A TO3PML NTE Electronics, Inc. Datasheet	488 Marketplace	1 : $7.93 10 : $75.30 20 : $142.80 50 : $337.00 100 : $658.00 Bag	Bag	Active	TO-3P-3 Full Pack	Through Hole	-55°C ~ 150°C (TJ)	MOSFET (Metal Oxide)	N-Channel	21.3A (Tc)	85mOhm @ 10.65A, 10V	-	90W (Tc)	4V @ 250µA	TO-3PML	-	10V	±20V	200 V	123 nC @ 10 V	3000 pF @ 25 V	-
NTE2375 MOSFET N-CHANNEL 100V 41A TO247 NTE Electronics, Inc. Datasheet	214 Marketplace	1 : $10.41 10 : $98.90 20 : $187.40 50 : $442.50 100 : $864.00 Bag	Bag	Active	TO-247-3	Through Hole	-55°C ~ 175°C (TJ)	MOSFET (Metal Oxide)	N-Channel	41A (Tc)	55mOhm @ 25A, 10V	-	230W (Tc)	4V @ 250µA	TO-247	-	10V	±20V	100 V	140 nC @ 10 V	2800 pF @ 25 V	-
NTE2395 MOSFET N-CHANNEL 60V 50A TO220 NTE Electronics, Inc. Datasheet	647 Marketplace	1 : $5.47 10 : $52.00 20 : $98.40 50 : $232.50 100 : $454.00 Bag	Bag	Active	TO-220-3	Through Hole	-55°C ~ 175°C (TJ)	MOSFET (Metal Oxide)	N-Channel	50A (Tc)	28mOhm @ 31A, 10V	-	150W (Tc)	4V @ 250µA	TO-220	-	10V	±20V	60 V	67 nC @ 10 V	1900 pF @ 25 V	-
NTE2932 MOSFET N-CH 200V 21.3A TO3PML NTE Electronics, Inc. Datasheet	488 Marketplace	1 : $7.93 10 : $75.30 20 : $142.80 50 : $337.00 100 : $658.00 Bag	Bag	Active	TO-3P-3 Full Pack	Through Hole	-55°C ~ 150°C (TJ)	MOSFET (Metal Oxide)	N-Channel	21.3A (Tc)	85mOhm @ 10.65A, 10V	-	90W (Tc)	4V @ 250µA	TO-3PML	-	10V	±20V	200 V	123 nC @ 10 V	3000 pF @ 25 V	-
NTE2375 MOSFET N-CHANNEL 100V 41A TO247 NTE Electronics, Inc. Datasheet	214 Marketplace	1 : $10.41 10 : $98.90 20 : $187.40 50 : $442.50 100 : $864.00 Bag	Bag	Active	TO-247-3	Through Hole	-55°C ~ 175°C (TJ)	MOSFET (Metal Oxide)	N-Channel	41A (Tc)	55mOhm @ 25A, 10V	-	230W (Tc)	4V @ 250µA	TO-247	-	10V	±20V	100 V	140 nC @ 10 V	2800 pF @ 25 V	-
NTE2395 MOSFET N-CHANNEL 60V 50A TO220 NTE Electronics, Inc. Datasheet	647 Marketplace	1 : $5.47 10 : $52.00 20 : $98.40 50 : $232.50 100 : $454.00 Bag	Bag	Active	TO-220-3	Through Hole	-55°C ~ 175°C (TJ)	MOSFET (Metal Oxide)	N-Channel	50A (Tc)	28mOhm @ 31A, 10V	-	150W (Tc)	4V @ 250µA	TO-220	-	10V	±20V	60 V	67 nC @ 10 V	1900 pF @ 25 V	-
NTE2384 MOSFET N-CHANNEL 900V 6A TO3 NTE Electronics, Inc. Datasheet	54 Marketplace	1 : $50.84 10 : $483.00 20 : $915.20 50 : $2,160.50 100 : $4,220.00 Bag	Bag	Active	TO-204AA, TO-3	Through Hole	-55°C ~ 150°C (TJ)	MOSFET (Metal Oxide)	N-Channel	6A (Tc)	1.4Ohm @ 3A, 10V	-	180W (Tc)	4.5V @ 250µA	TO-3	-	10V	±20V	900 V	130 nC @ 10 V	2600 pF @ 25 V	-
NTE2384 MOSFET N-CHANNEL 900V 6A TO3 NTE Electronics, Inc. Datasheet	54 Marketplace	1 : $50.84 10 : $483.00 20 : $915.20 50 : $2,160.50 100 : $4,220.00 Bag	Bag	Active	TO-204AA, TO-3	Through Hole	-55°C ~ 150°C (TJ)	MOSFET (Metal Oxide)	N-Channel	6A (Tc)	1.4Ohm @ 3A, 10V	-	180W (Tc)	4.5V @ 250µA	TO-3	-	10V	±20V	900 V	130 nC @ 10 V	2600 pF @ 25 V	-

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Single FETs, MOSFETs

Manufacturer

Series

Packaging

Product Status

Package / Case

Mounting Type

Operating Temperature

Technology

FET Type

Current - Continuous Drain (Id) @ 25°C

Rds On (Max) @ Id, Vgs

FET Feature

Power Dissipation (Max)

Vgs(th) (Max) @ Id

Supplier Device Package

Grade

Drive Voltage (Max Rds On, Min Rds On)

Vgs (Max)

Drain to Source Voltage (Vdss)

Gate Charge (Qg) (Max) @ Vgs

Input Capacitance (Ciss) (Max) @ Vds

Qualification

Single FETs, MOSFETs

Manufacturer

Series

Packaging

Product Status

Package / Case

Mounting Type

Operating Temperature

Technology

FET Type

Current - Continuous Drain (Id) @ 25°C

Rds On (Max) @ Id, Vgs

FET Feature

Power Dissipation (Max)

Vgs(th) (Max) @ Id

Supplier Device Package

Grade

Drive Voltage (Max Rds On, Min Rds On)

Vgs (Max)

Drain to Source Voltage (Vdss)

Gate Charge (Qg) (Max) @ Vgs

Input Capacitance (Ciss) (Max) @ Vds

Qualification

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Environmental Options

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